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| Si7478DP New Product Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 60 rDS(on) () 0.0075 @ VGS = 10 V 0.0088 @ VGS = 4.5 V ID (A) 20 18.5 FEATURES * TrenchFET(R) Power MOSFET * New Low Thermal Resistance PowerPAK(R) Package with Low 1.07-mm Profile * 100 % Rg Tested RoHS COMPLIANT APPLICATIONS PowerPAK SO-8 6.15 mm S 1 2 3 S S 5.15 mm * Automotive Such As: - High-Side Switch - Motor Drives - 12-V Boardnet D G 4 D 8 7 6 5 D D D G Bottom View Ordering Information: Si7478DP-T1--E3 (Lead (Pb)-Free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150C)a Pulsed Drain Current Continuous Source Current (Diode Avalanche Current Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b, c Conduction)a TA = 25C TA = 70C Symbol VDS VGS ID IDM IS IAS EAS TA = 25C TA = 70C PD TJ, Tstg 10 secs 60 20 20 16 60 4.5 35 61 5.4 3.4 -55 to 150 260 1.9 1.2 1.6 mJ W C 15 12 A Steady State Unit V THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) t 10 sec Steady State Steady State Symbol RthJA RthJC Typical 18 52 1.0 Maximum 23 65 1.3 Unit C/W Notes a. Surface Mounted on 1" x 1" FR4 Board. b. See Solder Profile ( http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 72913 S-51566-Rev. B, 07-Nov-05 www.vishay.com 1 Si7478DP Vishay Siliconix New Product SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 4.5 A, di/dt = 100 A/s VDD = 30 V, RL = 30 ID 1 A, VGEN = 10 V, RG = 6 0.5 VDS = 30 V, VGS = 10 V, ID = 20 A 105 22 19 1.0 25 20 115 45 41 1.5 40 30 175 70 70 ns 160 nC VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 A VDS = 0 V, VGS = 20 V VDS = 60 V, VGS = 0 V VDS = 60 V, VGS = 0 V, TJ = 55C VDS 5 V, VGS = 10 V VGS = 10 V, ID = 20 A VGS = 4.5 V, ID = 18.5 A VDS = 15 V, ID = 20 A IS = 4.5 A, VGS = 0 V 40 0.006 0.007 63 0.76 1.2 0.0075 0.0088 1.0 3.0 100 1 5 A A S V V nA Symbol Test Condition Min Typ Max Unit Notes a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless noted 60 VGS = 10 thru 4 V 60 50 50 I D - Drain Current (A) I D - Drain Current (A) 40 40 30 30 20 3V 20 TC = 125C 25C - 55C 10 10 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics www.vishay.com 2 Document Number: 72913 S-51566-Rev. B, 07-Nov-05 Si7478DP New Product TYPICAL CHARACTERISTICS 0.012 Vishay Siliconix 25 C, unless noted 10000 On-Resistance ( ) 0.010 Capacitance (pF) VGS = 4.5 V 0.008 8000 Ciss 6000 0.006 VGS = 10 V - 4000 r DS(on) C 2000 0.004 - 0.002 Coss Crss 0.000 0 10 20 ID 30 40 50 60 0 0 10 VDS 20 30 40 50 60 - Drain Current (A) - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 10 Gate-to-Source Voltage (V) VDS = 30 V ID = 20 A rDS(on) - On-Resistance (Normalized) 1.8 VGS = 10 V ID = 20 A Capacitance 8 1.6 1.4 6 1.2 4 1.0 V GS - 2 0.8 0 0 20 Qg 40 60 80 100 120 0.6 - 50 - 25 0 25 50 75 100 125 150 - Total Gate Charge (nC) TJ - Junction Temperature (C) Gate Charge 0.020 60 0.016 On-Resistance vs. Junction Temperature Source Current (A) On-Resistance ( ) TJ = 150C 10 ID = 20 A 0.012 0.008 - IS TJ = 25C r DS(on) 0.004 1 0.0 0.000 0.2 VSD 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Document Number: 72913 S-51566-Rev. B, 07-Nov-05 www.vishay.com 3 Si7478DP Vishay Siliconix New Product TYPICAL CHARACTERISTICS 25 C, unless noted 0.6 0.4 0.2 V GS(th) Variance (V) - 0.0 - 0.2 - 0.4 - 0.6 20 - 0.8 - 1.0 - 50 0 - 25 0 25 50 75 100 125 150 0.01 0.1 1 Time (sec) 10 100 600 TJ - Temperature (C) Power (W) 60 ID = 250 A 80 100 40 Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 rDS(on) Limited 10 I D - Drain Current (A) IDM Limited P(t) = 0.001 P(t) = 0.01 ID(on) Limited 1 P(t) = 0.1 P(t) = 1 0.1 TA = 25C Single Pulse BVDSS Limited 1 VDS 10 P(t) = 10 dc 0.01 0.1 100 Drain-to-Source Voltage (V) Safe Operating Area 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 52C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 72913 S-51566-Rev. B, 07-Nov-05 Si7478DP New Product TYPICAL CHARACTERISTICS 25 C, unless noted 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse Vishay Siliconix 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (sec) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72913. Document Number: 72913 S-51566-Rev. B, 07-Nov-05 www.vishay.com 5 |
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